Analysis of Film Growth in Silicon Thermal Oxidation

Ethan Khan, Leo Bruno, Owen Lawrence, Iulian Gherasoiu

Electrical Engineering Technology, College of Engineering, SUNY Polytechnic Institute, Utica, NY, USA

The thermal oxidation of silicon is a fundamental process in semiconductor device fabrication. Understanding the kinetics and mechanisms of this process is essential for optimizing device performance and reliability. Our Project demonstrates the growth of silicon oxide under specific temperature and ambient conditions and highlights our understanding of the process.